2sb1202/2sd1802 no.2113-1/10 applications ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of fbet and mbit processes ? large current capacitance and wide aso ? low collector-to-emitter saturation voltage ? fast switching speed ? small and slim package making it easy to make 2sb1202/2sd1802-used sets smaller speci cations ( ): 2sb1202 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)5 a collector current (pulse) i cp (--)6 a continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : en2113d 82912 tkim/42512ea tkim/13004tn (kt)/92098ha (kt)/8259mo/4137ki/4116ki, ts sanyo semiconductors data sheet 2sb1202/2sd1802 pnp/npn epitaxial planar silicon transistor high-current switching applications http://www.sanyosemi.com/en/network/ 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-f a 2,4 3 1 (for pnp, the polarity is reversed.) tl product & package information ? package : tp ? package : tp-fa ? jeita, jedec : s sc-64, to-251 ? jeita, jedec : s sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking (tp, tp-fa) packing type (tp-fa) : tl electrical connection b1202 d1802 lot no. rank lot no. rank 2sb1202s-e 2sb1202t-e 2sd1802s-e 2sd1802t-e 2sb1202s-tl-e 2SB1202T-TL-E 2sd1802s-tl-e 2sd1802t-tl-e
2sb1202/2sd1802 no.2113-2/10 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 1w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe 1v ce =(--)2v, i c =(--)100ma 100* 560* h fe 2v ce =(--)2v, i c =(--)3a 35 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (39)25 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)2a, i b =(--)100ma (--0.35)0.19 (--0.7)0.5 mv base-to-emitter saturation voltage v be (sat) v ce =(--)2v, i c =(--)100ma (--)0.94 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. 70 ns storage time t stg (450)650 ns fall time t f 35 ns * : the 2sb1202/2sd1802 are classi ed by 100ma hfe as follows : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 switching time test circuit ordering information device package shipping memo 2sb1202s-e tp 500pcs./bag pb free 2sb1202t-e tp 500pcs./bag 2sd1802s-e tp 500pcs./bag 2sd1802t-e tp 500pcs./bag 2sb1202s-tl-e tp-fa 700pcs./reel 2SB1202T-TL-E tp-fa 700pcs./reel 2sd1802s-tl-e tp-fa 700pcs./reel 2sd1802t-tl-e tp-fa 700pcs./reel v r r b v cc =25v v be = --5v + + 50 input r l 25 output 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =1a for pnp, the polarity is reversed.
2sb1202/2sd1802 no.2113-3/10 -- 5 -- 4 -- 3 -- 2 -- 1 2sb1202 2sd1802 i b =0 10ma 20ma 100ma 80ma 60ma 40ma 5ma itr09163 0 0 --2.0 --1.6 --0.4 --0.8 --1.2 --200ma --100ma --10ma --50ma --20ma - -5ma i b =0 itr09162 5 4 3 2 1 0 0 0.8 2.0 0.4 1.2 1.6 ta=75 c --25 c 25 c ta=75 c --25 c 25 c itr09168 100 1000 5 7 3 2 5 7 100 1000 5 7 5 7 3 2 0.01 0.1 1.0 --1.0 --0.1 3 25 573 257 3 25 7 3 25 3 25 7 3 25 57 7 --0.01 itr09169 2sb1202 v ce = --2v 2sd1802 v ce =2v 2sb1202 v ce = --2v ta=75 c --25 c 25 c ta=75 c --25 c 25 c --3.6 --3.2 --2.8 --2.0 --2.4 --1.2 --0.8 --1.6 --0.4 0 3.6 3.2 2.8 0.4 1.2 0.8 2.4 2.0 1.6 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 itr09166 2sd1802 v ce =2v 0 0.2 0.4 0.6 0.8 1.2 1.0 itr09167 --2.0 --1.6 --1.2 --0.8 --0.4 2sb1202 2sd1802 i b =0 8ma 7ma 2ma 1ma 4ma 3ma 6ma 5ma itr09165 0 0 --20 --16 --4 --8 --12 --10ma --12ma --14ma --2ma --6ma --8ma --4ma i b =0 itr09164 2.0 1.6 1.2 0.8 0.4 0 08 20 41216 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a h fe -- i c collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a dc current gain, h fe
2sb1202/2sd1802 no.2113-4/10 --0.1 --1.0 3 257 3 257 3 2 --0.01 2sb1202 v ce = --10v 100 3 2 7 5 1000 3 2 7 5 10 itr09170 0.1 1.0 3 257 3 257 3 2 0.01 2sd1802 v ce =10v 100 3 2 7 5 1000 3 2 7 5 10 itr09171 --1.0 --10 5 7 3 5 7 3 2 1.0 10 7 5 3 7 5 3 2 2sd1667 itr09176 itr09177 ta= --25 c 25 c 2sb1202 i c / i b =20 2sd1802 i c / i b =20 75 c ta= --25 c 75 c ta= --25 c 75 c ta= --25 c 25 c 75 c --0.1 --0.01 23 5 572357235 7 --1.0 --1000 5 3 2 7 5 3 2 7 --100 --10 itr09174 itr09175 0.01 0.1 7235 572357235 1.0 --0.1 --0.01 23 5 572357235 7 --1.0 0.01 0.1 7235 572357235 1.0 1000 5 3 7 2 5 3 7 2 100 10 25 c 2sb1202 i c / i b =20 2sd1802 i c / i b =20 25 c 37 2 1.0 10 537 2 100 5 itr09173 2sd1802 f=1mhz 3 2 7 5 3 2 5 100 10 3 2 7 5 3 2 5 100 10 37 2 --1.0 --10 537 2 --100 5 itr09172 2sb1202 f=1mhz v ce (sat) -- i c collector current, i c -- a v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a
2sb1202/2sd1802 no.2113-5/10 0 16 12 14 15 10 8 6 4 2 1 20 060 40 80 100 140 120 160 itr09179 2sb1202 / 2sd1802 10ms 1.0 5 2 3 10 5 2 3 5 2 3 0.1 0.01 10 1.0 25 3 37 100 25 37 57 dc operation ta=25 c dc operation tc=25 c i cp =6a 1ms i c =3a itr09178 2sb1202 / 2sd1802 100ms a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v tc=25 c single pulse for pnp, the minus sign is omitted. collector dissipation, p c -- w ambient temperature, ta -- c p c -- ta no heat sink ideal heat dissipation
2sb1202/2sd1802 no.2113-6/10 taping speci cation 2sb1202s-tl-e, 2SB1202T-TL-E, 2sd1802s-tl-e, 2sd1802t-tl-e
2sb1202/2sd1802 no.2113-7/10 outline drawing land pattern example 2sb1202s-tl-e, 2SB1202T-TL-E, 2sd1802s-tl-e, 2sd1802t-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2sb1202/2sd1802 no.2113-8/10 bag packing speci cation 2sb1202s-e, 2sb1202t-e, 2sd1802s-e, 2sd1802t-e
2sb1202/2sd1802 no.2113-9/10 outline drawing 2sb1202s-e, 2sb1202t-e, 2sd1802s-e, 2sd1802t-e mass (g) unit 0.315 * for reference mm
2sb1202/2sd1802 no.2113-10/10 ps this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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